Ultra-Precision High-Power High-Voltage Resistors
(HI80)Introduction (HI80)
New ruthenium material, extended ultra-precision high-power high-voltage resistors (HI80) breakthrough 300W, precision narrowed to 0.1%.
![High Voltage Non-Inductive Resistor (HI80)](image/hi80d.jpg)
High Voltage Non-Inductive Resistor (HI80)
Token electronic ultra-precision high-power high-voltage resistor (HI80) family series take advantage of new ultra-fine ruthenium material, 95% aluminum oxide ceramic rods, and thick film non-inductive Serpentine Pattern Design. Precision can be narrowed to ±0.1%, and power breakthrough 300W. (HI80) featuring heat-resistant, humidity-resistant, resisting electrical pulse, and stable and reliable long-term performance, is specifically designed for general purpose industrial high voltage system applications.
(HI80) family of high-voltage resistors includes conventional high-voltage resistors (HI80D), conventional miniaturized high-voltage resistors (HI80DS), high-power high-voltage resistors (HI80P), and ultra-precision high-voltage resistors (HI80T).
Conventional high voltage resistors (HI80D) have a wide resistance range of 200Ω ~ 10GΩ, rated power 2.5W ~ 20W, accuracy tolerance F (± 1%), J (± 5%), K (± 10%), the lowest temperature coefficient down to 50ppm on request, and the standard temperature coefficient of 100ppm.
(HI80DS) All-film conventional miniature high-voltage resistor relative to (hi80d), with small size, higher power 3W ~ 30W, withstand higher voltage, and none-inductance. The temperature coefficient of the lowest can reach 50ppm (25°c ~105°c), the standard temperature coefficient of 100ppm. Precision Tolerances F (±1%), J (±5%), K (±10%).
High power high voltage resistors (HI80P) have high rated power 20W ~ 300W, resistance range 1Ω ~ 1GΩ, precision tolerance D (± 0.5%), F (± 1%), J (± 5%), K (± 10% ), The temperature coefficient of up to 25ppm (on request), the standard temperature coefficient of 50ppm.
Ultra-precision high-voltage resistor (HI80T) characters 15ppm temperature coefficient, the standard temperature coefficient is 25ppm, the precision tolerance has B (± 0.1%), D (± 0.5%), F (± 1%), the resistance range 1Ω ~ 500MΩ, and the rated power 0.8W ~ 6W to choose from.
Token (HI80) Voltage Resistor series is able to absorb large amounts of energy at high voltage while remaining non-inductive and heavy load characteristics. The HI80 conforms to the RoHS directives and Lead-free. Customed design, and tighter tolerances are available on request.
For customed designs, tighter tolerances, non-standard technical requirements, or custom special applications, please contact our sales for more information.
Download complete specification Ultra-Precision High-Power High-Voltage Resistors (HI80) PDF.
Features :
- Thick film sensorless design.
- Wide range of resistance.
- Bottom temperature coefficient and high precision.
- Resistance to humidity, heat and electricity.
- Long term performance, stable and reliable.
Applications :
- Impulse voltage generators,
- Arc furnace damping, Energy research,
- Pulse modulators, Radar Pulse-forming networks,
- Capacitor crowbar circuits, High voltage snubber circuits,
- X-ray/imaging equipment, and EMI/lightning supression.
Conventional High Voltage Resistor Construction (HI80D)
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Membrane Material (a) | Ruthenium Paste | |
Base Material (b) | 95% Aluminum Oxide, Al2O3 | ||
Encapsulating Material (c) | High Temperature Silicone Resin |
Specifications & Painted Dimensions (Unit: mm) (HI80D)
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Part Number | Rated power (W) Ambient temperature (75°C) |
Max. continuous Oper. Volt (KV) | Resistance range (Ω) | Dimensions (mm) | |||||
Min. | Max. | L ±0.5mm | E ±3mm | D ±0.5mm | d ±0.1mm | ||||
HI80D-15 | 0.5 | 3.0 | 200 | 1G | 15 | 30 | 5.0 | 0.8 | |
HI80D-20 | 2.5 | 4.8 | 200 | 1G | 20 | 28 | 8.0 | 1.0 | |
HI80D-26 | 3.7 | 6.4 | 250 | 1G | 27 | 28 | 8.0 | 1.0 | |
HI80D-32 | 4.5 | 8.0 | 300 | 1.5G | 33 | 28 | 8.0 | 1.0 | |
HI80D-39 | 5.2 | 12.8 | 400 | 1.5G | 39 | 28 | 8.0 | 1.0 | |
HI80D-52 | 7.5 | 16 | 500 | 2.5G | 52 | 28 | 8.0 | 1.0 | |
HI80D-78 | 11 | 24 | 900 | 4G | 78 | 28 | 8.0 | 1.0 | |
HI80D-103 | 12 | 32 | 1K2 | 6G | 103 | 28 | 8.0 | 1.0 | |
HI80D-124 | 15 | 40 | 1K5 | 8G | 124 | 28 | 8.0 | 1.0 | |
HI80D-154 | 20 | 45 | 2K | 10G | 154 | 28 | 8.0 | 1.0 |
Conventional Miniature High Voltage Resistor Construction (HI80DS)
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Membrane Material (a) | Ruthenium Paste | |
Base Material (b) | 95% Aluminum Oxide, Al2O3 | ||
Encapsulating Material (c) | High Temperature Silicone Resin |
Conventional Miniature Specifications & Painted Dimensions (Unit: mm) (HI80DS)
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Part Number | Rated power (W) Ambient temperature (75°C) |
Max. continuous Oper. Volt (KV) | Resistance range (Ω) | Dimensions (mm) | |||||
Min. | Max. | L ±0.5mm | E ±3mm | D ±0.5mm | d ±0.1mm | ||||
HI80DS-20 | 3 | 4.8 | 200 | 1G | 20.2 | 30 | 8.2 | 1.0 | |
HI80DS-26 | 5 | 6.4 | 250 | 1G | 26.9 | 30 | 8.2 | 1.0 | |
HI80DS-32 | 7 | 8.0 | 300 | 1.5G | 33.0 | 30 | 8.2 | 1.0 | |
HI80DS-39 | 9 | 12.8 | 400 | 1.5G | 39.5 | 30 | 8.2 | 1.0 | |
HI80DS-52 | 10 | 16 | 500 | 2.5G | 52.1 | 30 | 8.2 | 1.0 | |
HI80DS-78 | 15 | 24 | 900 | 4G | 77.7 | 30 | 8.2 | 1.0 | |
HI80DS-103 | 20 | 32 | 1K2 | 6G | 102.9 | 30 | 8.2 | 1.0 | |
HI80DS-124 | 25 | 40 | 1K5 | 8G | 123.7 | 30 | 8.2 | 1.0 | |
HI80DS-154 | 30 | 45 | 2K | 10G | 153.7 | 30 | 8.2 | 1.0 |
Construction (HI80T)
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Membrane Material (a) | Ruthenium Paste | |
Base Material (b) | 95% Aluminum Oxide, Al2O3 | ||
Encapsulating Material (c) | High Temperature Silicone Resin |
Ultra-Precision High Voltage Resistor Specifications (HI80T)
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Part Number | Rated power (W) | Max. continuous Oper. Volt (KV) | Resistance range (Ω) | L ±0.5mm | E ±3mm | D ±0.5mm | d ±0.1mm | |
HI80T-20 | 0.8 | 3 | 1 ~ 500M | 20 | 30 | 8 | 1 | |
HI80T-26 | 1.0 | 4 | 1 ~ 500M | 27 | 30 | 8 | 1 | |
HI80T-32 | 1.2 | 5 | 1 ~ 500M | 33 | 30 | 8 | 1 | |
HI80T-39 | 1.5 | 6 | 1 ~ 500M | 39 | 30 | 8 | 1 | |
HI80T-52 | 2 | 10 | 1 ~ 500M | 52 | 30 | 8 | 1 | |
HI80T-78 | 3 | 15 | 1 ~ 500M | 78 | 30 | 8 | 1 | |
HI80T-103 | 4 | 20 | 1 ~ 500M | 103 | 30 | 8 | 1 | |
HI80T-124 | 5 | 25 | 1 ~ 500M | 124 | 30 | 8 | 1 | |
HI80T-154 | 6 | 30 | 1 ~ 500M | 154 | 30 | 8 | 1 |
High-Power High Voltage Resistor Construction (Unit: mm) (HI80P)
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Membrane Material (a) | Ruthenium Paste | |
Base Material (b) | 95% Aluminum Oxide, Al2O3 | ||
Encapsulating Material (c) | High Temperature Silicone Resin | ||
Cap (d) | Nickel Plating Copper |
High-Power High Voltage Resistor Specifications (Unit: mm) (HI80P)
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Part Number | Rated power (W) | Max. continuous Oper. Volt (KV) | Resistance range (Ω) | L ±1mm | E ±1mm | D ±0.5mm | d ±0.01mm | |
HI80P-20 | 20 | 30 | 1 ~ 1G | 116 | 10 | 17 | M6 | |
HI80P-30 | 30 | 30 | 1 ~ 1G | 116 | 10 | 19 | M6 | |
HI80P-50 | 50 | 30 | 1 ~ 1G | 116 | 10 | 21 | M6 | |
HI80P-80 | 80 | 30 | 1 ~ 1G | 130 | 10 | 28 | M6 | |
HI80P-100 | 100 | 35 | 1 ~ 1G | 160 | 10 | 28 | M6 | |
HI80P-150 | 150 | 60 | 1 ~ 1G | 210 | 10 | 28 | M6 | |
HI80P-200 | 200 | 60 | 1 ~ 1G | 260 | 10 | 28 | M6 | |
HI80P-300 | 300 | 80 | 1 ~ 1G | 310 | 10 | 33 | M6 |
Technical Characteristics - (HI80)
Part Number | Resistance range (Ω) | Tolerance (%) | TCR @25°C (-55°C ~ +105°C) | Insulation withstand voltage | Insulation resistance | Operating temp. range |
HI80D | 200 ~ 10G | ±1% ~ ±10% | 100ppm/°C,(±50ppm/°C on request) | 1000VDC | ≥ 10GΩ | -55°C ~ +225°C |
HI80DS | 200 ~ 10G | ±5% ~ ±10% | 100ppm/°C,(±50ppm/°C on request) | |||
HI80T | 1 ~ 500M | ±0.1% ~ ±1% | ±25ppm/°C,(±15ppm/°C on request) | |||
HI80P | 1 ~ 1G | ±0.5% ~ ±10% | ±50ppm/°C,(±25ppm/°C on request) |
Environmental Characteristics - (HI80)
Inspection item | Inspection method | Performance requirement |
Overload | 5 times the rated power, but not more than 1.5 times the maximum continuous operating voltage, 5 seconds | ΔR ≤ ±(0.2%R + 0.01Ω) |
Load life | 1000 hours under rated power | ΔR ≤ ±(0.5%R + 0.01Ω) |
Steady-state damp heat | 40°C, RH ≥ 95%, 240h | ΔR ≤ ±(0.4%R + 0.01Ω) |
Temperature shock | -65°C ~ 155°C, 5 cycle | ΔR ≤ ±(0.2%R + 0.01Ω) |
Power Derating Curve - (HI80)
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Power Derating Curve - (HI80DS)
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Advance Technique of Non-Inductive & Serpentine Pattern (HI80)
![High Voltage Resistors (HI80) Serpentine Pattern](image/high-voltage-resistors-serpentine-pattern-3.jpg)
Non-Inductive Performance:
- HI80 Non-Inductive Design which uses a serpentine resistive pattern that offers for zigzagging lines to carry current in opposite directions,
thereby achieving maximum neutralization of flux fields over the entire length of the resistor.
- This efficient non-inductive construction without derating of any performance advantages is ideal for applications where high frequency is required.
Serpentine Pattern Screen Printing Design:
- Type High Voltage HI80 Precision Resistors combine Token's Non-Inductive serpentine pattern, high thru-put screen printed silicone coating.
- The alignment of the gap in the serpentine resistor pattern with the gap in the coating pattern provides a complete encapsulation of the resistor element.
- The cap and lead assemblies are pressed onto the resistor core, finishing the resistor and providing rugged terminal attachment.
Order Codes (HI80D) Conventional High Voltage Resistor
HI80D | 39 | 1G | F | ||||||||||||||||||||||||||||||||||||
1 | 2 | 3 | 4 | ||||||||||||||||||||||||||||||||||||
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Note: TCR 100ppm/°C, (±50ppm/°C on request).
Order Codes (HI80DS) Conventional Miniature high voltage resistors
HI80DS | 124 | 1G | F | ||||||||||||||||||||||||||||||||||
1 | 2 | 3 | 4 | ||||||||||||||||||||||||||||||||||
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Note: TCR 100ppm/°C, (±50ppm/°C on request).
Order Codes (HI80T) Ultra-Precision High Voltage Resistor
HI80T | 32 | 500M | B | ||||||||||||||||||||||||||||||||
1 | 2 | 3 | 4 | ||||||||||||||||||||||||||||||||
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Note: TCR ±25ppm/°C, (±15ppm/°C on request).
Order Codes (HI80P) High-Power High Voltage Resistor
HI80P | 20 | a | 1G | F | ||||||||||||||||||||||||||||||||||||||||
1 | 2 | 3 | 4 | 5 | ||||||||||||||||||||||||||||||||||||||||
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Note: TCR ±50ppm/°C, (±25ppm/°C on request).